Inductively coupled plasma treatment device

誘導結合プラズマ処理装置

Abstract

PROBLEM TO BE SOLVED: To provide an inductively coupled plasma treatment device which can perform heating for preventing the deposition of reaction products with high energy efficiency without taking the heat resistance of a sealing member which seals a dielectric wall and a treatment chamber into account. SOLUTION: This inductively coupled plasma treatment device comprises a treatment chamber 4 in which plasma treatment is performed on a substrate G, a process gas supplying system 20 which supplies a process gas to the chamber 4, and an exhaust system 30 which exhausts the chamber 4. The device also comprises the dielectric wall 2 constituting the top or side wall of the chamber 4, a high-frequency antenna 13 which is installed to the portion corresponding to the wall 2 and forms an induction field in the chamber 4, and a cover member 10 which is provided on the inside of the wall 2 to cover the wall 2 and made of a dielectric material. In addition, the device also comprises a heating means 9 which heats the cover member 10, and a heat insulating means 8 which thermally insulates the wall 2 and heating means 9 from each other.
(57)【要約】 【課題】 反応生成物の堆積を防止する加熱を行う際の エネルギー効率の高い誘導結合プラズマ処理装置を提供 すること、およびこれに加えて誘電体壁と処理室とをシ ールするシール部材の耐熱性を考慮することなく加熱す ることができる誘導結合プラズマ装置を提供すること。 【解決手段】 基板Gにプラズマ処理を施す処理室4 と、処理室4内に処理ガスを供給する処理ガス供給系2 0と、処理室4内を排気する排気系30と、処理室4の 上部壁または側壁を構成する誘電体壁2と、処理室外の 誘電体壁2に対応する部分に設けられ処理室4内に誘導 電界を形成する高周波アンテナ13と、誘電体壁2の内 側に誘電体壁2を覆うように設けられた誘電体からなる カバー部材10と、カバー部材10を加熱する加熱手段 9と、誘電体壁2と加熱手段9との間を断熱する断熱手 段8とにより誘導結合プラズマ処理装置が構成される。

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Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    JP-2000068252-AMarch 03, 2000Matsushita Electric Ind Co Ltd, 松下電器産業株式会社プラズマ処理装置および処理方法
    JP-2000150481-AMay 30, 2000Sony Corp, ソニー株式会社Etching device and manufacture of semiconductor device using the same

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    JP-2008198902-AAugust 28, 2008Tokyo Electron Ltd, 東京エレクトロン株式会社Plasma treatment apparatus
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    JP-2011187902-ASeptember 22, 2011Hitachi High-Technologies Corp, 株式会社日立ハイテクノロジーズプラズマ処理装置およびプラズマ処理方法
    JP-2011258622-ADecember 22, 2011Tokyo Electron Ltd, 東京エレクトロン株式会社Plasma processing apparatus and its dielectric window structure
    JP-2014099585-AMay 29, 2014Tokyo Electron Ltd, 東京エレクトロン株式会社Plasma processing device
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